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| Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorlaufige Daten preliminary data Hochstzulassige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Kollektor Dauergleichstrom DC collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt Verlustleistung total power dissipation Gate Emitter Spitzenspannung gate emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current Grenzlastintegral It value Isolations Prufspannung insulation test voltage tp= 1ms VR= 0V, tp= 10ms, Tvj= 125C Tvj= 25C Tc= 80C Tc= 25C tp= 1ms, Tc= 80C Tc= 25C;Transistor VCES IC, nom IC ICRM Ptot VGES IF IFRM 1200 1600 2300 3200 V A A A 7,8 kW +/- 20 V 1600 A 3200 A It 300 k As RMS, f= 50Hz, t= 1min. VISOL 2,5 kV Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sattigungsspannung collector emitter satration voltage Gate Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor Emitter Reststrom collector emitter cut off current Gate Emitter Reststrom gate emitter leakage current IC= 1600A, VGE= 15V, Tvj= 25C, IC= 1600A, VGE= 15V, Tvj= 125C, IC= 64mA, VCE= VGE, Tvj= 25C, VGE= -15V...+15V;VCE= ...V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V VCE=1200V, VGE= 0V, Tvj= 25C, VCE= 0V, VGE= 20V, Tvj= 25C VCEsat VGE(th) QG Cies Cres ICES IGES min. 5 typ. 1,7 2 5,8 max. 2,15 t.b.d. 6,5 V V V - 15,4 - C - 115 - nF - 5,4 - nF - - 5 mA - - 400 nA prepared by: MOD-D2; Mark Munzer approved: SM TM; Christoph Lubke date of publication: 2002-07-29 revision: 2.0 1 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorlaufige Daten preliminary data Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter IC= 1600A, VCC= 600V Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) VGE=15V, RGon=1,6W, T vj=25C VGE=15V, RGon=1,6W, T vj=125C min. td,on tr typ. 0,60 0,66 max. s s IC= 1600A, VCC= 600V Anstiegszeit (induktive Last) rise time (inductive load) VGE=15V, RGon=1,6W, T vj=25C VGE=15V, RGon=1,6W, T vj=125C - 0,23 0,22 - s s IC= 1600A, VCC= 600V Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) VGE=15V, RGoff =0,2W, T vj=25C VGE=15V,RGoff =0,2W, T vj=125C td,off - 0,82 0,96 - s s IC= 1600A, VCC= 600V Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls turn off energy loss per pulse Kurzschlussverhalten SC data Modulindiktivitat stray inductance module Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip Tc= 25C VGE=15V, RGoff =0,2W, T vj=25C VGE=15V, RGoff =0,2W, T vj=125C tf - 0,15 0,18 325 - s s mJ IC= 1600A, VCC= 600V, Ls= 45nH VGE=15V, RGon=1,6W, T vj=125C Eon Eoff ISC - IC= 1600A, VCC= 600V, Ls= 45nH VGE=15V, RGoff =0,2W, T vj=125C - 250 - mJ tP 10s, VGE 15V, TVj 125C VCC= 900V, VCEmax= VCES - LsCE * cdi/dtc - 6400 - A LsCE RCC/EE - 12 - nH - 0,19 - mW Charakteristische Werte / characteristic values Diode Wechselrichter / diode inverter Durchlassspannung forward voltage Ruckstromspitze peak reverse recovery current IF= IC, nom, VGE= 0V, Tvj= 25C IF= IC, nom, VGE= 0V, Tvj= 125C IF=IC,nom, -diF/dt= 7200A/s VR= 600V, VGE= -15V, Tvj= 25C VR= 600V, VGE= -15V, Tvj= 125C Sperrverzogerungsladung recoverred charge IF=IC,nom, -diF/dt= 7200A/s VR= 600V, VGE= -15V, Tvj= 25C VR= 600V, VGE= -15V, Tvj= 125C Ausschaltenergie pro Puls reverse recovery energy IF=IC,nom, -diF/dt= 7200A/s VR= 600V, VGE= -15V, Tvj= 25C VR= 600V, VGE= -15V, Tvj= 125C Erec 18 47 mJ mJ Qr 75 180 C C IRM 515 800 A A VF 2,2 2 2,8 V V 2 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorlaufige Daten preliminary data Thermische Eigenschaften / thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemp. maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature pro Transistor /per transistor, DC pro Diode/per Diode, DC pro Modul / per module lPaste/lgrease =1W/m*K RthJC RthJC RthCK Tvj max Tvj op Tstg typ. 0,006 max. 0,016 0,032 K/W K/W K/W - - 150 C -40 - 125 C -40 - 125 C Mechanische Eigenschaften / mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment, mech. Befestigung mounting torque Anzugsdrehmoment, elektr. Anschlusse terminal connection torque Schraube / screw M5 M 4,25 Al2O3 32 mm 20 mm >400 - 5,75 Nm Anschlusse / terminal M4 M 1,7 - 2,3 Nm Anschlusse / terminal M8 Gewicht weight M 8 - 10 Nm G 1500 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes. 3 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorlaufige Daten preliminary data Ausgangskennlinie (typisch) output characteristic (typical) 3200 2800 2400 2000 IC [A] 1600 1200 800 400 0 0,0 0,5 1,0 1,5 VCE [V] 2,0 Tvj = 25C Tvj = 125C IC= f(VCE) VGE= 15V 2,5 3,0 3,5 Ausgangskennlinienfeld (typisch) output characteristic (typical) 3200 2800 2400 2000 IC [A] 1600 1200 800 400 0 0,0 0,5 1,0 1,5 2,0 2,5 VCE [V] 3,0 Vge=19V Vge=17V Vge=15V Vge=13V Vge=11V Vge=9V IC= f(VCE) Tvj= 125C 3,5 4,0 4,5 5,0 4 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorlaufige Daten preliminary data Ubertragungscharakteristik (typisch) transfer characteristic (typical) 3200 2800 2400 2000 IC [A] 1600 1200 800 400 0 5 6 7 8 9 VGE [V] 10 Tvj=25C Tvj=125C IC= f(VGE) VCE= 20V 11 12 13 Durchlasskennlinie der Inversdiode (typisch) forward caracteristic of inverse diode (typical) 3200 2800 2400 2000 IF [A] 1600 1200 800 400 0 Tvj = 25C Tvj = 125C IF= f(VF) 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0 VF [V] 5 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorlaufige Daten preliminary data Schaltverluste (typisch) Switching losses (typical) 1000 900 800 700 E [mJ] 600 500 400 300 200 100 0 0 400 800 Eon Eoff Erec Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) VGE=15V, Rgon=1,6W, Rgoff=0,2W, VCE=600V, Tvj=125C 1200 1600 IC [A] 2000 2400 2800 3200 Schaltverluste (typisch) Switching losses (typical) 1000 900 800 700 600 E [mJ] 500 400 300 200 100 0 0 2 4 Eon Eoff Erec Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V, IC=1600A, VCE=600V, Tvj=125C 6 RG [W] 8 10 12 6 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorlaufige Daten preliminary data Transienter Warmewiderstand Transient thermal impedance 0,1 ZthJC = f (t) ZthJC [K/W] 0,01 Zth : IGBT Zth : Diode 0,001 0,001 0,01 0,1 t [s] 1 10 i ri [K/kW] : IGBT ti [s] : IGBT ri [K/kW] : Diode ti [s] : Diode 1 1,91 6,897E-01 9,18 4,452E-01 2 6,27 5,634E-02 10,08 7,451E-02 3 6,17 2,997E-02 10,58 2,647E-02 4 1,65 3,820E-03 2,16 2,850E-03 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 4000 3600 3200 2800 IC [A] 2400 2000 1600 1200 800 400 0 0 200 400 600 IC,Chip IC,Chip VGE=15V, T j=125C 800 1000 1200 1400 VCE [V] 7 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorlaufige Daten preliminary data Gehausemae / Schaltbild Package outline / Circuit diagram 61.5 18 0.2 0.3 C (K) C (K) 29.5 0.5 130 114 E (A) 0.5 0.1 E (A) DD... C C C 28.25 0.5 18.25 0.5 M8 G E C 14.75 M 0.5 C E FD... E 14 0.5 E 0.3 8 C C E C C 2 + 0.2 28 0.5 4.0 tief 10.65 2.5 tief 48.8 G E 0.2 0.2 G 10.35 0.2 E E E o7 +0.1 (fur M6-Schraube) external connection (to be done) FZ... IH4 8 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact". |
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